文化勲章受章の赤崎勇先生がWileyから出版した論文

２５日、２０１１年度の文化勲章受章者と文化功労者が発表され、青色発光ダイオード（LED）の実用化に貢献された名城大学・赤崎勇教授の文化勲章受章が決まりました。先生のご受章を心からお祝い申し上げます。

赤崎先生には、physica status solidi誌を中心にWileyから多数の論文を出版していただいています。先生のご業績をご覧いただくための一助として、下の文献リストをご利用いただければ幸いです。

雑誌論文

Nagata, K., Takeda, K., Oshimura, Y., Takehara, K., Aoshima, H., Ito, S., Iwaya, M., Takeuchi, T., Kamiyama, S., Akasaki, I., Amano, H., Yoshida, H., Kuwabara, M., Yamashita, Y. and Kan, H. (2011), Injection efficiency in AlGaN-based UV laser diodes. physica status solidi (c), 8: 2384–2386. doi: 10.1002/pssc.201001008

Oshimura, Y., Sugiyama, T., Takeda, K., Iwaya, M., Takeuchi, T., Kamiyama, S., Akasaki, I. and Amano, H. (2011), Low leakage current in AlGaN/GaN HFETs with preflow of Mg source before growth of u-GaN buffer layer. physica status solidi (a), 208: 1607–1610. doi: 10.1002/pssa.201001020

Fujii, T., Kuwahara, Y., Iida, D., Fujiyama, Y., Morita, Y., Sugiyama, T., Isobe, Y., Iwaya, M., Takeuchi, T., Kamiyama, S., Akasaki, I. and Amano, H. (2011), GaInN-based solar cells using GaInN/GaInN superlattices. physica status solidi (c), 8: 2463–2465. doi: 10.1002/pssc.201001152

Pernot, C., Fukahori, S., Inazu, T., Fujita, T., Kim, M., Nagasawa, Y., Hirano, A., Ippommatsu, M., Iwaya, M., Kamiyama, S., Akasaki, I. and Amano, H. (2011), Frontispiece: Development of high efficiency 255–355 nm AlGaN-based light-emitting diodes (Phys. Status Solidi A 7/2011). physica status solidi (a), 208: n/a. doi: 10.1002/pssa.201121824

Pernot, C., Fukahori, S., Inazu, T., Fujita, T., Kim, M., Nagasawa, Y., Hirano, A., Ippommatsu, M., Iwaya, M., Kamiyama, S., Akasaki, I. and Amano, H. (2011), Development of high efficiency 255–355 nm AlGaN-based light-emitting diodes. physica status solidi (a), 208: 1594–1596. doi: 10.1002/pssa.201001037

Isobe, Y., Iida, D., Sakakibara, T., Iwaya, M., Takeuchi, T., Kamiyama, S., Akasaki, I., Amano, H., Imade, M., Kitaoka, Y. and Mori, Y. (2011), Optimization of initial MOVPE growth of non-polar m- and a-plane GaN on Na flux grown LPE-GaN substrates. physica status solidi (c), 8: 2095–2097. doi: 10.1002/pssc.201001144

Sugiyama, T., Honda, Y., Yamaguchi, M., Amano, H., Oshimura, Y., Iida, D., Iwaya, M. and Akasaki, I. (2011), Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate. physica status solidi (c), 8: 2424–2426. doi: 10.1002/pssc.201001081

Takehara, K., Takeda, K., Nagata, K., Sakurai, H., Ito, S., Iwaya, M., Takeuchi, T., Kamiyama, S., Akasaki, I. and Amano, H. (2011), Transparent electrode for UV light-emitting-diodes. physica status solidi (c), 8: 2375–2377. doi: 10.1002/pssc.201001148

Ikki, H., Isobe, Y., Iida, D., Iwaya, M., Takeuchi, T., Kamiyama, S., Akasaki, I., Amano, H., Bandoh, A. and Udagawa, T. (2011), AlGaN/GaInN/GaN heterostructure field-effect transistor. physica status solidi (a), 208: 1614–1616. doi: 10.1002/pssa.201001153

Isobe, Y., Iida, D., Sakakibara, T., Iwaya, M., Takeuchi, T., Kamiyama, S., Akasaki, I., Amano, H., Imade, M., Kitaoka, Y. and Mori, Y. (2011), Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method. physica status solidi (a), 208: 1191–1194. doi: 10.1002/pssa.201001019

Kuwano, N., Miyake, H., Hiramatsu, K., Amano, H. and Akasaki, I. (2011), Evidence for moving of threading dislocations during the VPE growth in GaN thin layers. physica status solidi (c), 8: 1487–1490. doi: 10.1002/pssc.201001126

Nagata, K., Takeda, K., Nonaka, K., Ichikawa, T., Iwaya, M., Takeuchi, T., Kamiyama, S., Akasaki, I., Amano, H., Yoshida, H., Kuwabara, M., Yamashita, Y. and Kan, H. (2011), Reduction in threshold current density of 355 nm UV laser diodes. physica status solidi (c), 8: 1564–1568. doi: 10.1002/pssc.201001119

Takeda, K., Nagata, K., Ichikawa, T., Nonaka, K., Ogiso, Y., Oshimura, Y., Iwaya, M., Takeuchi, T., Kamiyama, S., Akasaki, I., Amano, H., Yoshida, H., Kuwabara, M., Yamashita, Y. and Kan, H. (2011), Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer. physica status solidi (c), 8: 464–466. doi: 10.1002/pssc.201000588

Nagamatsu, K., Iida, D., Takeda, K., Nagata, K., Asai, T., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I. (2010), Atomic layer epitaxy of AlGaN. physica status solidi (c), 7: 2368–2370. doi: 10.1002/pssc.200983862

Sugiyama, T., Iida, D., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I. (2010), Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate. physica status solidi (c), 7: 2419–2422. doi: 10.1002/pssc.200983863

Oshimura, Y., Takeda, K., Sugiyama, T., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Bandoh, A. and Udagawa, T. (2010), AlGaN/GaN HFETs on Fe-doped GaN substrates. physica status solidi (c), 7: 1974–1976. doi: 10.1002/pssc.200983587

Ishihara, A., Kawai, R., Kitano, T., Suzuki, A., Kondo, T., Iwaya, M., Amano, H., Kamiyama, S. and Akasaki, I. (2010), Growth and characterization of GaN grown on moth-eye patterned sapphire substrates. physica status solidi (c), 7: 2056–2058. doi: 10.1002/pssc.200983505

Takeda, K., Mori, F., Ogiso, Y., Ichikawa, T., Nonaka, K., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I. (2010), Internal quantum efficiency of GaN/AlGaN-based multi quantum wells on different dislocation densities underlying layers. physica status solidi (c), 7: 1916–1918. doi: 10.1002/pssc.200983625

Kawai, R., Kondo, T., Suzuki, A., Teramae, F., Kitano, T., Tamura, K., Sakurai, H., Iwaya, M., Amano, H., Kamiyama, S., Akasaki, I., Chen, M., Li, A. and Su, K. (2010), Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode. physica status solidi (c), 7: 2180–2182. doi: 10.1002/pssc.200983584

Nonaka, K., Asai, T., Nagamatsu, K., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I. (2010), Defects in highly Mg-doped AlN. physica status solidi (a), 207: 1299–1301. doi: 10.1002/pssa.200983504

Nagata, K., Ichikawa, T., Takeda, K., Nagamatsu, K., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I. (2010), High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient. physica status solidi (a), 207: 1393–1396. doi: 10.1002/pssa.200983448

Kawai, Y., Ohsuka, S., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I. (2009), Improvement of crystalline quality of InGaN epilayers on various crystal planes of ZnO substrate by metal-organic vapor phase epitaxy. physica status solidi (c), 6: S486–S489. doi: 10.1002/pssc.200880863

Nagamatsu, K., Takeda, K., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I. (2009), Activation energy of Mg in Al_0.25Ga_0.75N and Al_0.5Ga_0.5N. physica status solidi (c), 6: S437–S439. doi: 10.1002/pssc.200880810

Senda, R., Matsubara, T., Iida, D., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I. (2009), Realization of high-crystalline-quality and thick GaInN films. physica status solidi (c), 6: S502–S505. doi: 10.1002/pssc.200880989

Iida, D., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I. (2009), Activation energy of Mg in a -plane Ga1–xInx N (0 < x < 0.17). physica status solidi (b), 246: 1188–1190. doi: 10.1002/pssb.200880826

Ochiai, W., Kawai, R., Suzuki, A., Iwaya, M., Amano, H., Kamiyama, S. and Akasaki, I. (2009), Optimization of electrode configuration in large GaInN light-emitting diodes. physica status solidi (c), 6: 1416–1419. doi: 10.1002/pssc.200881518

Tsuzuki, H., Mori, F., Takeda, K., Ichikawa, T., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Yoshida, H., Kuwabara, M., Yamashita, Y. and Kan, H. (2009), High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer. physica status solidi (a), 206: 1199–1204. doi: 10.1002/pssa.200880784

Iwaya, M., Miura, S., Fujii, T., Kamiyama, S., Amano, H. and Akasaki, I. (2009), High-performance UV detector based on AlGaN/GaN junction heterostructure-field-effect transistor with a p-GaN gate. physica status solidi (c), 6: S972–S975. doi: 10.1002/pssc.200880815

Kawai, R., Mori, T., Ochiai, W., Suzuki, A., Iwaya, M., Amano, H., Kamiyama, S. and Akasaki, I. (2009), High-reflectivity Ag-based p-type ohmic contacts for blue light-emitting diodes. physica status solidi (c), 6: S830–S832. doi: 10.1002/pssc.200880785

Senda, R., Miura, A., Kawashima, T., Iida, D., Nagai, T., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I. (2008), Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth. physica status solidi (c), 5: 3045–3047. doi: 10.1002/pssc.200779252

Nagamatsu, K., Okada, N., Kato, N., Sumii, T., Bandoh, A., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I. (2008), Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE. physica status solidi (c), 5: 3048–3050. doi: 10.1002/pssc.200779226

Iida, D., Kawashima, T., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I. (2008), Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy. physica status solidi (c), 5: 1575–1578. doi: 10.1002/pssc.200778502

Tsuda, M., Furukawa, H., Honshio, A., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I. (2006), X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN. physica status solidi (b), 243: 1524–1528. doi: 10.1002/pssb.200565344

Amano, H., Takeuchi, T., Yamaguchi, S., Wetzel, C. and Akasaki, I. (1998), Characterization of the crystalline quality on GaN on sapphire and ternary alloys. Electronics and Communications in Japan (Part II: Electronics), 81: 48–54. doi: 10.1002/(SICI)1520-6432(199810)81:10<48::AID-ECJB6>3.0.CO;2-A

書籍

Amano, H., Kawashima, T., Iida, D., Imura, M., Iwaya, M., Kamiyama, S. and Akasaki, I. (2008) Metalorganic Vapor Phase Epitaxial Growth of Nonpolar Al(Ga,In)N Films on Lattice-Mismatched Substrates,
in Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices (ed T. Paskova), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527623150.ch5